STP50NE10L n - channel 100v - 0.020 w - 50a to-220 stripfet ? power mosfet n typical r ds(on) = 0.020 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge at 100 o c n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc.) ? internal schematic diagram may 1999 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w )100v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c50a i d drain current (continuous) at t c = 100 o c35a i dm ( ) drain current (pulsed) 200 a p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c dv/dt ( 1 ) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 50 a, di/dt 275 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d STP50NE10L 100 v <0.025 w 50 a 1 2 3 to-220 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 50 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 400 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 25 a v gs = 5 v i d = 25 a 0.020 0.024 0.025 0.030 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =25 a 45 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 5000 500 180 pf pf pf STP50NE10L 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v i d = 25 a r g = 4.7 w v gs = 5 v (resistive load, see fig. 3) 30 105 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 50 a v gs = 5 v 82 17 49 105 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 50 v i d = 25 a r g = 4.7 w v gs = 5 v (resistive load, see fig. 3) 135 45 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 80 v i d = 50 a r g = 4.7 w v gs = 5 v (inductive load, see fig. 5) 45 45 85 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 50 200 a a v sd ( * ) forward on voltage i sd = 50 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a di/dt = 100 a/ m s v dd = 50 v t j = 150 o c (see test circuit, fig. 5) 165 870 10.5 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STP50NE10L 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STP50NE10L 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STP50NE10L 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STP50NE10L 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP50NE10L 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . STP50NE10L 8/8
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